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Document Number: 89366 For technical questions within your
region, please contact one of
the following: www.vishay.com
Revision: 03-Nov-10
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
1
Trench MOS Barrier Schottky Rectifierfor PV Solar Cell Bypass Protection
Ultra Low VF
= 0.33 V at I
F
= 10 A
VT6045CBP
Vishay General Semiconductor
New Product
FEATURES
? Trench MOS Schottky technology
? Low forward voltage drop, low power losses
? High efficiency operation
? Solder dip 275 °C max. 10 s, per JESD 22-B106
? Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
?
Halogen-free according to IEC 61249-2-21 definition
TYPICAL APPLICATIONS
For use in solar cell junction box as a bypass diode for
protection, using DC forward current without reverse bias.
MECHANICAL DATA
Case: TO-220AB
Molding compound meets UL 94
V-0 flammabi
lity rating
Base P/N-M3 - halogen-free, RoHS compliant, and
commercial grade
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity:
As marked
Mounting Torque:
10 in-lbs maximum
Notes
(1)
With heatsink
(2)
Meets the requirements of IEC 61215 ed. 2 bypass diode thermal test
PRIMARY CHARACTERISTICS
IF(AV)
2 x 30 A
VRRM
45 V
IFSM
320 A
VF at IF
= 30 A 0.47 V
TOP
max. 150 °C
TO-220AB
VT6045CBP
1
32
PIN 1
PIN 2
CASE
PIN 3
TMBS?
MAXIMUM RATINGS (TA
= 25 °C unless otherwise noted)
PARAMETER SYMBOL VT6045CBP UNIT
Maximum repetitive peak reverse voltage VRRM
45 V
Maximum average forward rectified current (fig. 1)
per device
IF(AV)
(1)
per diode 30
60
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
IFSM
320 A
Operating junction and storage temperature range TOP, TSTG
- 40 to + 150 °C
Junction temperature in DC forward current
without reverse bias, t ≤
1 h
TJ
(2)
≤
200 °C
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